@article{3012324,
    title = "Infrared absorption spectra of defects in carbon doped neutron-irradiated Si",
    author = "Londos, C.A. and Antonaras, G.D. and Potsidi, M.S. and Aliprantis, D.N. and Misiuk, A.",
    journal = "Journal of Materials Science: Materials in Electronics",
    year = "2007",
    volume = "18",
    number = "7",
    pages = "721-728",
    issn = "0957-4522",
    doi = "10.1007/s10854-006-9101-8",
    keywords = "Carbon doped neutron-irradiated silicon;  Carbon related structure;  High hydrostatic pressure (HTHP), Absorption spectra;  Crystals;  Heat treatment;  Infrared absorption;  Irradiation;  Paramagnetic resonance, Silicon",
    abstract = "Experimental data of infrared (IR) absorption measurements carried out on fast neutron irradiated carbon rich Cz-Si crystals were studied. Data from similar crystals, subjected prior to irradiation to thermal treatments at 1000 °C [(HT)] and thermal treatments at 1000 °C under high hydrostatic pressure [(HTHP)] of 11Kbar, were also studied. The time duration of both treatments was 5 h. After the irradiation the intensities of most of the observed bands were always stronger in the pre-treated material. Transformation of the defects upon post-irradiation isochronal anneals was investigated. Two out of six IR bands of the C iC s defect in the neutral charge state, at 543.5 and 635 cm -1, were detected at room temperature [(RT)]. It is argued that another two bands at 918 and 1006 cm -1 arising in the spectra upon annealing of the C iC s bands are associated with the same carbon-related structure giving rise to the Si-PT4 electron paramagnetic resonance (EPR) spectrum. A band at 533 cm -1 shows the same thermal evolution with a defect giving rise to the Si-P6 EPR spectrum attributed to a multi-interstitial cluster in silicon. Differences observed in the evolution curves of the C iC s (Si I) defect (987, 993 cm -1) between the as-grown and the pre-treated samples are considered and discussed. © Springer Science+Business Media, LLC 2007."
}