@article{3012496,
    title = "Temperature dependence of Si-GaAs energy gap using photoconductivity spectra",
    author = "Zardas, G.E. and Yannakopoulos, P.H. and Ziska, M. and Symeonides, Chr. and Vesely, M. and Euthymiou, P.C.",
    journal = "Microelectronics Journal",
    year = "2006",
    volume = "37",
    number = "2",
    pages = "91-93",
    issn = "0026-2692",
    doi = "10.1016/j.mejo.2005.04.056",
    keywords = "Photoconductivity;  Photocurrents;  Photoelectron spectroscopy;  Photons;  Semiconducting gallium arsenide;  Semiconducting silicon;  Semiconductor materials;  Thermal effects, Energy gaps;  Photoconductivity methods;  Photon energy;  Recombination and trapping, Band structure",
    abstract = "In the present work, we study the Energy gap (Eg) of the Si-GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature. © 2005 Elsevier Ltd. All rights reserved."
}