@article{3013041,
    title = "Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates",
    author = "Bak-Misiuk, J. and Dynowska, E. and Misiuk, A. and Calamiotou, M. and Kozanecki, A. and Domagala, J. and Kuristyn, D. and Glukhanyuk, W. and Georgakilas, A. and Trela, J. and Adamczewska, J.",
    journal = "Crystal Research and Technology",
    year = "2001",
    volume = "36",
    number = "8-10",
    pages = "997-1003",
    issn = "0232-1300, 1521-4079",
    doi = "10.1002/1521-4079(200110)36:8/10<997::AID-CRAT997>3.0.CO;2-G",
    keywords = "Bending (deformation);  Heterojunctions;  High temperature effects;  Hydrostatic pressure;  Pressure effects;  Strain rate;  X ray diffraction, Strain relaxation, Semiconducting gallium arsenide",
    abstract = "The effect of high hydrostatic pressure - high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated by X-ray diffraction methods. The strain of the GaAs layers and GaAs/Si samples bending decreases when subjected to the treatment at T = 670 K under enhanced hydrostatic pressure (1.2 GPa). Dependence between the stress-induced structural changes and the orientation of GaAs miscut angle as well as peculiarities of the temperature-pressure treatment were determined. It has been shown that the amount of relaxed strain depends on the initial defect structure of the GaAs/Si hetrostructure. After reannealing the samples at higher temperature (870 K - 1.2 GPa), the strain and sample bending were the same as that after the treatment at 670 K - 1.2 GPa but the defect structure of layers was improved."
}