@article{3013378,
    title = "Electrical characterisation of silicon wafer bonding structures",
    author = "Dimitrakis, P. and Hatzandroulis, S. and Tsoukalas, D. and Stoimenos, J. and Papaioannou, G.J.",
    journal = "Solid State Electronics",
    year = "1998",
    volume = "42",
    number = "2",
    pages = "201-204",
    publisher = "Elsevier Ireland Ltd",
    issn = "0038-1101",
    doi = "10.1016/S0038-1101(97)00227-X",
    keywords = "Activation energy;  Bonding;  Capacitors;  Dislocations (crystals);  Electric properties;  Interfaces (materials);  Oxides;  Semiconducting films;  Semiconductor device structures;  Semiconductor doping;  Silicon on insulator technology;  Thermal stress, Bias thermal stress;  Dry oxidation, Silicon wafers",
    abstract = "Metal-insulator-semiconductor-insulator-semiconductor (MISIS) capacitors, fabricated using direct wafer bonding, have been used for the evaluation of the electrical properties of a silicon film (4.1 μim), a buried oxide (42 nm) and its interfaces. After the dry oxidation of the film, the grown oxide has a thickness of 25 nm, and the doping concentration of the film increased by one order of magnitude. The minority carrier generation mechanism was detected. Its activation energy (554 meV), denotes the high-quality of the interfaces. A deep level (315 meV) was found by DLTS. The most probable sources of this trap are mainly the divacancy-phosphorus complexes presented in the Si film. The concentration of dislocations in Si film is very low (< 105 cm-2). Bias-temperature stress (BTS) showed the presence of a low concentration of positive charges (2.2 × 109 cm-2) in the oxide. © 1998 Elsevier Science Ltd. All rights reserved."
}