@article{3034780,
    title = "Broadband wavelength-selective isotype heterojunction n(+)-ZnO/n-Si
photodetector with variable polarity",
    author = "Chatzigiannakis, Georgios and Jaros, Angelina and Leturcq, Renaud and and Jungclaus, Joergen and Voss, Tobias and Gardelis, Spiros and Kandyla, and Maria",
    journal = "Journal of Alloys and Compounds",
    year = "2022",
    volume = "903",
    publisher = "ELSEVIER SCIENCE SA",
    issn = "0925-8388",
    doi = "10.1016/j.jallcom.2022.163836",
    keywords = "ZnO; Silicon; Isotype heterojunction; Wavelength selective
photodetector; Photoluminescence; Photoconductivity",
    abstract = "An isotype heterojunction n(+)-ZnO/n-Si photodetector is developed,
demonstrating wavelength-selective or broadband operation, depending on
the applied bias voltage. Additionally, at self-powered (zero bias)
operation, it distinguishes between UV, visible, and near IR (NIR)
photons by polarity control of the photocurrent. The photodetector is
developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by
electric contact deposition and annealing. Photoluminescence
measurements reveal high optical quality and improved crystallinity of
annealed ZnO on silicon. Photocurrent measurements as a function of
illumination wavelength and bias voltage show small negative values in
the UV-visible spectral range at zero and positive bias voltage and high
positive values in the NIR spectral range. For these measurements, we
consider the electric contact to ZnO as the anode and the electric
contact to silicon as the cathode. At negative bias voltage, the device
shows broadband operation with high photocurrent values across the
UV-vis-NIR. (C) 2022 Elsevier B.V. All rights reserved."
}