@article{3037162,
    title = "ESD failure signature in capacitive RF MEMS switches",
    author = "Ruan, J. and Papaioannou, G.J. and Nolhier, N. and Mauran, N. and Bafleur, M. and Coccetti, F. and Plana, R.",
    journal = "MICROELECTRONICS AND RELIABILITY",
    year = "2008",
    volume = "48",
    number = "8-9",
    pages = "1237-1240",
    issn = "0026-2714",
    doi = "10.1016/j.microrel.2008.06.035",
    keywords = "Composite micromechanics;  Electric discharges;  Electric fields;  Electromagnetic field theory;  Electromagnetic fields;  Electromagnetism;  Electrostatic discharge;  Inductance;  Ketones;  Magnetism;  MEMS;  Microelectromechanical devices;  Sulfate minerals, Dielectric charging;  Electrical arcing;  Electrical discharges;  Failure criteria;  High electric fields;  Induced charges;  Parameter shifts;  RF MEMS;  RF-MEMS switches;  Transient voltages;  Transmission line pulsing, Electrostatic devices",
    abstract = "RF MEMS are commonly known as electrostatic devices using high electric field for their actuation. They can be exposed to transient voltages in any environment, and are very sensitive. According to this point of view, it is necessary to understand and analyze the degradations and failure criteria that can make them useless or reduce their lifetime. This paper deals with the investigation of ESD failure signature in capacitive RF MEMS. ESD experiments were carried out using a transmission line pulsing technique. It has been observed that electrical discharges give rise to sparks or electrical arcing and induced DC parameter shift, which can directly lead to changes in RF metrics. The contact-less dielectric charging effects of ESD pulses have been reported in this paper. It has been found that induced charges are predominant compared to injected ones through the trend of slope of the shift in the voltage corresponding to the minimum of capacitance. © 2008 Elsevier Ltd. All rights reserved."
}