@inproceedings{3052630,
    title = "Hot-carrier effects in 0.15 mu m low dose SIMOX N-MOSFETs",
    author = "Dimitrakis, P and Jomaah, J and Balestra, F and Papaioannou, GJ",
    year = "2000",
    pages = "59-62",
    publisher = "IEEE Comput. Soc",
    booktitle = "ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR
DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS",
    doi = "10.1109/ASDAM.2000.889452",
    abstract = "The induced damage in Si film due to hot-carrier degradation of
partially depleted low dose SIMOX 0.15 mum gate length NMOSFET’s
operating near the off state were thoroughly investigated. It was
discovered that the less the doping density, the longer the device
lifetime. The front channel subthreshold swing was monitored mid ii was
found to be logarithmically dependant on stress time. BOX leakage
current exhibited a threshold ill stress time after which it was
decreased. This threshold depends on the stress conditions."
}