@article{3072037,
    title = "Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition",
    author = "Zacharaki, C. and Tsipas, P. and Chaitoglou, S. and Fragkos, S. and Axiotis, M. and Lagoyiannis, A. and Negrea, R. and Pintilie, L. and Dimoulas, A.",
    journal = "Applied Physics Letters",
    year = "2019",
    volume = "114",
    number = "11",
    publisher = "American Institute of Physics Inc.",
    issn = "0003-6951, 1077-3118",
    doi = "10.1063/1.5090036",
    keywords = "Deposition;  Ferroelectricity;  Germanium;  Hafnium compounds;  Oxygen;  Polarization;  Substrates;  Zirconium compounds, Crystalline interfaces;  Ferroelectric field effect transistors;  Ferroelectric hysteresis;  Germanium substrates;  Metal-ferroelectric-semiconductors;  Nonvolatile memory cells;  Orthorhombic phase;  Polycrystalline ferroelectrics, Field effect transistors",
    abstract = "Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5-0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 μC/cm2 or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance. © 2019 Author(s)."
}