@article{3074037,
    title = "Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches",
    author = "Marcelli, R. and Papaioannu, G. and Catoni, S. and De Angelis, G. and Lucibello, A. and Proietti, E. and Margesin, B. and Giacomozzi, F. and Deborgies, F.",
    journal = "Journal of applied physics",
    year = "2009",
    volume = "105",
    number = "11",
    issn = "0021-8979",
    doi = "10.1063/1.3143026",
    keywords = "Actuation voltages;  Capacitive shunt switch;  Charging effect;  Dielectric charging;  Dielectric layer;  High voltage;  MEMS switches;  Metal-insulator-metal structures;  Micro-electro-mechanical;  Microelectromechanical systems;  Microwave applications;  Poole-Frenkel effect;  Shunt capacitive;  Test vehicle, Composite micromechanics;  Dielectric materials;  Electric switches;  MEMS;  Metal insulator boundaries;  Microwaves;  MIM devices;  Space applications;  Structural metals, Microelectromechanical devices",
    abstract = "The charging of the dielectric used for the actuation in microelectromechanical system (MEMS) devices is one of the major failure sources for switches based on this technology. For this reason, a better understanding of such an effect is vital to improve the reliability for both ground and space applications. In this paper, the expected response of MEMS switches to unipolar and bipolar dc actuation voltages has been measured and modeled. Two configurations of MEMS switches, namely, an Ohmic series and a shunt capacitive one designed for microwave applications, have been studied as a test vehicle for charging effects related to the dc actuation pads. The recorded data have been interpreted mainly through the Poole-Frenkel effect due to charge injection when a high voltage is applied to the dielectric layer. Metal-Insulator-Metal (MIM) structures have been also considered as a complementary information for the response of the dielectric material. © 2009 American Institute of Physics."
}