@article{3074286,
    title = "N-N pair effects on GaInNAs semiconductor optical amplifiers",
    author = "Alexandropoulos, D. and Vogiatzis, N. and Qiu, Y.N. and Pozo, J. and Syvridis, D. and Rorison, J.M.",
    journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
    year = "2007",
    volume = "4",
    number = "2",
    pages = "655-659",
    doi = "10.1002/pssc.200673227",
    keywords = "Amplified spontaneous emission;  Amplifying properties;  Anti-crossing;  Band structures;  Conduction bands;  Gainnas;  International conferences;  N-N pairs;  Nano-devices;  Rate equations;  Semi-conductor optical amplifier;  Valence bands, Amplifiers (electronic);  Electric conductivity;  Electron mobility;  Gallium nitride;  Nanostructures;  Optical switches;  Optoelectronic devices;  Semiconductor materials;  Semiconductor optical amplifiers, Light amplifiers",
    abstract = "We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k-p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA."
}