TY - JOUR
TI - Temperature dependence of Si-GaAs energy gap using photoconductivity spectra
AU - Zardas, G.E.
AU - Yannakopoulos, P.H.
AU - Ziska, M.
AU - Symeonides, Chr.
AU - Vesely, M.
AU - Euthymiou, P.C.
JO - Microelectronics Journal
PY - 2006
VL - 37
TODO - 2
SP - 91-93
PB - 
SN - 0026-2692
TODO - 10.1016/j.mejo.2005.04.056
TODO - Photoconductivity;  Photocurrents;  Photoelectron spectroscopy;  Photons;  Semiconducting gallium arsenide;  Semiconducting silicon;  Semiconductor materials;  Thermal effects, Energy gaps;  Photoconductivity methods;  Photon energy;  Recombination and trapping, Band structure
TODO - In the present work, we study the Energy gap (Eg) of the Si-GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature. © 2005 Elsevier Ltd. All rights reserved.
ER -