TY - JOUR
TI - Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates
AU - Bak-Misiuk, J.
AU - Dynowska, E.
AU - Misiuk, A.
AU - Calamiotou, M.
AU - Kozanecki, A.
AU - Domagala, J.
AU - Kuristyn, D.
AU - Glukhanyuk, W.
AU - Georgakilas, A.
AU - Trela, J.
AU - Adamczewska, J.
JO - Crystal Research and Technology
PY - 2001
VL - 36
TODO - 8-10
SP - 997-1003
PB - 
SN - 0232-1300, 1521-4079
TODO - 10.1002/1521-4079(200110)36:8/10<997::AID-CRAT997>3.0.CO;2-G
TODO - Bending (deformation);  Heterojunctions;  High temperature effects;  Hydrostatic pressure;  Pressure effects;  Strain rate;  X ray diffraction, Strain relaxation, Semiconducting gallium arsenide
TODO - The effect of high hydrostatic pressure - high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated by X-ray diffraction methods. The strain of the GaAs layers and GaAs/Si samples bending decreases when subjected to the treatment at T = 670 K under enhanced hydrostatic pressure (1.2 GPa). Dependence between the stress-induced structural changes and the orientation of GaAs miscut angle as well as peculiarities of the temperature-pressure treatment were determined. It has been shown that the amount of relaxed strain depends on the initial defect structure of the GaAs/Si hetrostructure. After reannealing the samples at higher temperature (870 K - 1.2 GPa), the strain and sample bending were the same as that after the treatment at 670 K - 1.2 GPa but the defect structure of layers was improved.
ER -