TY - JOUR
TI - Design method and algorithms for directed self-assembly aware via layout decomposition in sub-7 nm circuits
AU - Karageorgos, I.
AU - Ryckaert, J.
AU - Gronheid, R.
AU - Tung, M.C.
AU - Wong, H.-S.P.
AU - Karageorgos, E.
AU - Croes, K.
AU - Bekaert, J.
AU - Vandenberghe, G.
AU - Stucchi, M.
AU - Dehaene, W.
JO - Journal of Micro Nanolithography MEMS and MOEMS
PY - 2016
VL - 15
TODO - 4
SP - null
PB - SPIE/International Society of Optical Engineering
SN - 1932-5150, 1932-5134
TODO - 10.1117/1.JMM.15.4.043506
TODO - Block copolymers;  Cost functions;  Costs;  Nanotechnology;  Photolithography;  Reconfigurable hardware;  Self assembly;  Timing circuits, Advanced technology;  alphabet;  Conventional photolithography;  Directed self-assembly;  Grouping algorithm;  Layout decomposition;  Multiple patterning;  via patterning, Design
TODO - Major advancements in the directed self-assembly (DSA) of block copolymers have shown the technique's strong potential for via layer patterning in advanced technology nodes. Molecular scale pattern precision along with low cost processing promotes DSA technology as a great candidate for complementing conventional photolithography. Our studies show that decomposition of via layers with 193-nm immersion lithography in realistic circuits below the 7-nm node would require a prohibitive number of multiple patterning steps. The grouping of vias through templated DSA can resolve local conflicts in high density areas, limiting the number of required masks, and thus cutting a great deal of the associated costs. A design method for DSA via patterning in sub-7-nm nodes is discussed. We present options to expand the list of usable DSA templates and we formulate cost functions and algorithms for the optimal DSA-aware via layout decomposition. The proposed method works a posteriori, after place-and-route, allowing for fast practical implementation. We tested this method on a fully routed 32-bit processor designed for sub-7 nm technology nodes. Our results demonstrate a reduction of up to four lithography masks when compared to conventional non-DSA-aware decomposition. © 2016 Society of Photo-Optical Instrumentation Engineers (SPIE).
ER -