TY - JOUR
TI - Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
AU - Zacharaki, C.
AU - Tsipas, P.
AU - Chaitoglou, S.
AU - Fragkos, S.
AU - Axiotis, M.
AU - Lagoyiannis, A.
AU - Negrea, R.
AU - Pintilie, L.
AU - Dimoulas, A.
JO - Applied Physics Letters
PY - 2019
VL - 114
TODO - 11
SP - null
PB - American Institute of Physics Inc.
SN - 0003-6951, 1077-3118
TODO - 10.1063/1.5090036
TODO - Deposition;  Ferroelectricity;  Germanium;  Hafnium compounds;  Oxygen;  Polarization;  Substrates;  Zirconium compounds, Crystalline interfaces;  Ferroelectric field effect transistors;  Ferroelectric hysteresis;  Germanium substrates;  Metal-ferroelectric-semiconductors;  Nonvolatile memory cells;  Orthorhombic phase;  Polycrystalline ferroelectrics, Field effect transistors
TODO - Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5-0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 μC/cm2 or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance. © 2019 Author(s).
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