TY - JOUR
TI - Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials
AU - Daanoune, M.
AU - Diab, A.
AU - Sirajeddine, S.
AU - Kaminski-Cachopo, A.
AU - Ionica, I.
AU - Papaioannou, G.
AU - Cristoloveanu, S.
JO - Journal of applied physics
PY - 2013
VL - 113
TODO - 18
SP - null
PB - 
SN - 0021-8979
TODO - 10.1063/1.4804064
TODO - Characterization techniques;  Interface quality;  Oxide interfaces;  Silicon-on-insulator materials;  Silicon-on-insulator substrates;  Strongly connected;  Surface recombination velocities;  Surface recombinations, Characterization;  Silicon;  Silicon on insulator technology, Interfaces (materials)
TODO - One of the main issues in the characterization of silicon on insulator (SOI) substrates is to determine the quality of the film-buried oxide interface. This interface quality is strongly connected to the carrier lifetime in the silicon film. In this paper, we extend the well-known pseudo-MOSFET characterization technique for SOI wafers to the extraction of carrier lifetime. The experiment consists in comparing the drain current measured under dark and under laser shining. A model is proposed to evaluate the surface recombination velocity in SOI. Experimental results are validated by numerical simulations. © 2013 AIP Publishing LLC.
ER -