TY - JOUR
TI - N-N pair effects on GaInNAs semiconductor optical amplifiers
AU - Alexandropoulos, D.
AU - Vogiatzis, N.
AU - Qiu, Y.N.
AU - Pozo, J.
AU - Syvridis, D.
AU - Rorison, J.M.
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
PY - 2007
VL - 4
TODO - 2
SP - 655-659
PB - 
SN - null
TODO - 10.1002/pssc.200673227
TODO - Amplified spontaneous emission;  Amplifying properties;  Anti-crossing;  Band structures;  Conduction bands;  Gainnas;  International conferences;  N-N pairs;  Nano-devices;  Rate equations;  Semi-conductor optical amplifier;  Valence bands, Amplifiers (electronic);  Electric conductivity;  Electron mobility;  Gallium nitride;  Nanostructures;  Optical switches;  Optoelectronic devices;  Semiconductor materials;  Semiconductor optical amplifiers, Light amplifiers
TODO - We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k-p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
ER -