TY - CONF
TI - Quantum dot lasers and relevant nanoheterostructures
AU - Zhukov, Alexey E.
AU - Kryzhanovskaya, Natalia V.
AU - Savelyev, Artem V.
AU - and Nadtochiy, Alexey M.
AU - Arakcheeva, Ekaterina M.
AU - Zubov, Fedor
AU - I.
AU - Korenev, Vladimir V.
AU - Maximov, Mikhail V.
AU - Shernyakov, Yuri
AU - M.
AU - Kulagina, Marina M.
AU - Slovinskiy, Ilia A.
AU - Livshits, Daniil
AU - A.
AU - Kapsalis, Alexandros
AU - Mesaritakis, Charis
AU - Syvridis,
AU - Dimitris
AU - Mintairov, Alexander
PY - 2012
SP - XV-XXIII
PB - SPIE - INT SOC OPTICAL ENGINEERING
T2 - INFRARED, MILLIMETER-WAVE, AND TERAHERTZ TECHNOLOGIES II
TODO - 10.1117/12.2009055
TODO - Quantum dots; semiconductor laser; microring resonator; two-state lasing
TODO - Spectral and power characteristics of QD stripe lasers operating in
two-state lasing regime have been studied in a wide range of operation
conditions. It was demonstrated that neither self-heating nor increase
of the homogeneous broadening are responsible for quenching of the
ground-state lasing beyond the two-state lasing threshold. It was found
that difference in electron and hole capture rates strongly affects
light-current curve. Modulation p-type doping is shown to enhance the
peak power of GS lasing transition. Microring and microdisk structures
(D = 4-9 mu m) comprising 1.3 mu m InAs/InGaAs quantum dots have been
fabricated and studied by mu-PL and NSOM. Ground-state lasing was
achieved well above root temperature (up to 380 K). Effect of inner
diameter on threshold characteristics was evaluated.
ER -