Implementation of the SPI protocol in 0.15 μm CMOS technology with circuit design for hardness to ionized radiation

Postgraduate Thesis uoadl:2863913 322 Read counter

Unit:
Κατεύθυνση Σχεδίασης Ολοκληρωμένων Κυκλωμάτων
Πληροφορική
Deposit date:
2019-02-28
Year:
2019
Author:
Kormanos Ioannis
Supervisors info:
Αραπογιάννη Αγγελική, Καθηγητής, Τμήμα πληροφορικής και τηλεπικοινωνιών, Σχολή θετικών επιστημών
Original Title:
Υλοποίηση πρωτόκολλου επικοινωνίας SPI σε τεχνολογία CMOS 0,15 μm με σχεδίαση κυκλωμάτων ανθεκτικών σε ιονίζουσες ακτινοβολίες
Languages:
Greek
Translated title:
Implementation of the SPI protocol in 0.15 μm CMOS technology with circuit design for hardness to ionized radiation
Summary:
The subject of this thesis is the implementation of the slave of the Serial Peripheral Interface (SPI) protocol, with the appropriate circuit design in order to guarantee hardness for the Singe Event Effects (SEE), caused by charged particles of cosmic radiation in the space environment. This hardness can be ensured on the one hand by modification of the layout of the foundry standard cells, with the introduction of guard rings and on the other hand by the usage of Triple Mode Redundancy (TMR) in the circuit architecture. The addition of guard rings reduces the possibility of latch-up.
The modified standard cells were fully characterized at simulation level. With the results of this characterization the .lib files were produced. These files are necessary for the simulation with the aid of digital simulators.
Using the hardware description language VHDL, two TMR implementations of the SPI slave block were designed. The two implementations were synthesized at gate level and their layout was generated using the modified standard cells in order to compare the performance of the final circuits.
Main subject category:
Technology - Computer science
Keywords:
Guard rings, Singe Event Effects (SEE), Triple Mode redundancy (TMR), SPI protocol, Standard cell characterization
Index:
Yes
Number of index pages:
16
Contains images:
Yes
Number of references:
42
Number of pages:
173
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