Περίληψη:
Spectral and power characteristics of QD stripe lasers operating in
two-state lasing regime have been studied in a wide range of operation
conditions. It was demonstrated that neither self-heating nor increase
of the homogeneous broadening are responsible for quenching of the
ground-state lasing beyond the two-state lasing threshold. It was found
that difference in electron and hole capture rates strongly affects
light-current curve. Modulation p-type doping is shown to enhance the
peak power of GS lasing transition. Microring and microdisk structures
(D = 4-9 mu m) comprising 1.3 mu m InAs/InGaAs quantum dots have been
fabricated and studied by mu-PL and NSOM. Ground-state lasing was
achieved well above root temperature (up to 380 K). Effect of inner
diameter on threshold characteristics was evaluated.
Συγγραφείς:
Zhukov, Alexey E.
Kryzhanovskaya, Natalia V.
Savelyev, Artem V.
and Nadtochiy, Alexey M.
Arakcheeva, Ekaterina M.
Zubov, Fedor
I.
Korenev, Vladimir V.
Maximov, Mikhail V.
Shernyakov, Yuri
M.
Kulagina, Marina M.
Slovinskiy, Ilia A.
Livshits, Daniil
A.
Kapsalis, Alexandros
Mesaritakis, Charis
Syvridis,
Dimitris
Mintairov, Alexander
