Design of high-power amplifiers using non-unilateral and unstable original GaN transistors over the X band

Postgraduate Thesis uoadl:2899351 286 Read counter

Unit:
Κατεύθυνση Σχεδίασης Ολοκληρωμένων Κυκλωμάτων
Πληροφορική
Deposit date:
2020-03-17
Year:
2020
Author:
Georgiou Polyxeni
Supervisors info:
Ευαγγέλια Καράγιαννη, Δρ. Ηλεκτρολόγος Μηχανικός ΕΜΠ, Αναπληρώτρια Καθηγήτρια ΣΝΔ
Original Title:
Σχεδίαση ενισχυτών υψηλής ισχύος άνω της X band με χρήση πρωτότυπων ασταθών και αμφίδρομων τρανζίστορ GaN
Languages:
English
Greek
Translated title:
Design of high-power amplifiers using non-unilateral and unstable original GaN transistors over the X band
Summary:
In this thesis, the design of high power amplifiers (HPAs) for extremely high frequencies (X-band, V-band) is studied. The circuit simulation was performed with the ADS simulation tool by Keysight. High power amplifiers are an essential structural part of the transmitters, as they are responsible for amplifying the transmitted signal. The large number of electronic applications (such as WiMax, 5G) that already exist nowadays, demands the use of even higher band frequencies, as lower bands are fully occupied. Therefore, the growth of new generation transistors based on GaN technology, lead to the design and implementation of innovative HPAs with satisfactory performance. In the next chapters, we will discuss the differences between GaN technology, the earlier GaAs technology, and how high mobility transistors (HEMT) work. In addition to this, we provide a comparison of small and large signal models, so that the transistor scattering parameters can be used correctly. Furthermore, we present the amplifier as a two-port network and analyze the factors that affect its reliability and use in each application. Such factors are the unilateral state, the stability and the performance of the amplifier. The main part of this thesis is presented in the fourth chapter, which includes the design of two amplifiers: the first one at the frequency of 58.5 GHz using a commercial type transistor and the second one at the frequency of 10GHz using original transistors manufactured in Greece. Finally, we present the design and customisation of devices with different resistivity topologies, so as to improve stability, and the design of bilateral networks that meet the high performance requirements of applications. The ultimate goal of the thesis is to identify the values of passive elements needed for optimal design, in order to begin their three-dimensional design.
Keywords:
Radar, Transmitter, Power Amplifier, Amplifier Performance, Mathcing Networks, Polarization Circuits, Stability, Unilateral, Feedback
Index:
No
Number of index pages:
0
Contains images:
Yes
Number of references:
21
Number of pages:
118
File:
File access is restricted only to the intranet of UoA.

Σχεδίαση ενισχυτών υψηλής ισχύος άνω της X band με χρήση πρωτότυπων ασταθών και αμφίδρομων τρανζίστορ GaN.pdf
6 MB
File access is restricted only to the intranet of UoA.