Τίτλος:
Temperature dependence of Si-GaAs energy gap using photoconductivity spectra
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
In the present work, we study the Energy gap (Eg) of the Si-GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature. © 2005 Elsevier Ltd. All rights reserved.
Συγγραφείς:
Zardas, G.E.
Yannakopoulos, P.H.
Ziska, M.
Symeonides, Chr.
Vesely, M.
Euthymiou, P.C.
Περιοδικό:
Microelectronics Journal
Λέξεις-κλειδιά:
Photoconductivity; Photocurrents; Photoelectron spectroscopy; Photons; Semiconducting gallium arsenide; Semiconducting silicon; Semiconductor materials; Thermal effects, Energy gaps; Photoconductivity methods; Photon energy; Recombination and trapping, Band structure
DOI:
10.1016/j.mejo.2005.04.056
