Τίτλος:
Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
The effect of high hydrostatic pressure - high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated by X-ray diffraction methods. The strain of the GaAs layers and GaAs/Si samples bending decreases when subjected to the treatment at T = 670 K under enhanced hydrostatic pressure (1.2 GPa). Dependence between the stress-induced structural changes and the orientation of GaAs miscut angle as well as peculiarities of the temperature-pressure treatment were determined. It has been shown that the amount of relaxed strain depends on the initial defect structure of the GaAs/Si hetrostructure. After reannealing the samples at higher temperature (870 K - 1.2 GPa), the strain and sample bending were the same as that after the treatment at 670 K - 1.2 GPa but the defect structure of layers was improved.
Συγγραφείς:
Bak-Misiuk, J.
Dynowska, E.
Misiuk, A.
Calamiotou, M.
Kozanecki, A.
Domagala, J.
Kuristyn, D.
Glukhanyuk, W.
Georgakilas, A.
Trela, J.
Adamczewska, J.
Περιοδικό:
Crystal Research and Technology
Λέξεις-κλειδιά:
Bending (deformation); Heterojunctions; High temperature effects; Hydrostatic pressure; Pressure effects; Strain rate; X ray diffraction, Strain relaxation, Semiconducting gallium arsenide
DOI:
10.1002/1521-4079(200110)36:8/10<997::AID-CRAT997>3.0.CO;2-G
