Τίτλος:
A high-density DRAM cell with built-in gain stage
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
A high density dynamic random access memory (DRAM) cell with built-in gain stage was proposed. It has increased reading speed, elongated refresh period, low-power oriented operation, and minor layout area penalty. New DRAM cell structure has a current mode sensing read operation, an increased retention time and a reduced memory pheriphery circuitry.
Συγγραφείς:
Kamoulakos, G.
Tsiatouhas, Y.
Chrisanthopoulos, A.
Arapoyanni, A.
Περιοδικό:
IEEE Transactions on Electron Devices
Λέξεις-κλειδιά:
Computer simulation; Integrated circuit layout; MOS devices; Semiconductor device models; Semiconductor doping; Threshold voltage, Trench capacitor parasitic channel (TCPC), Dynamic random access storage
