Τίτλος:
Gel formation theory approach for the modelling of negative chemically amplified e-beam resists
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.
Συγγραφείς:
Patsis, G.
Raptis, I.
Glezos, N.
Argitis, P.
Hatzakis, M.
Aidinis, C.J.
Gentili, M.
Maggiora, R.
Περιοδικό:
Microelectronic Engineering
Λέξεις-κλειδιά:
Acids; Composition; Diffusion; Gels; Models; Photoresists; Semiconducting polymers, Acid diffusion; Chemically amplified resist; Gel formation; Photoacid generator; Post exposure bake; Thermal processing, Electron beam lithography
DOI:
10.1016/S0167-9317(96)00178-5
