Τίτλος:
Broadband wavelength-selective isotype heterojunction n(+)-ZnO/n-Si
photodetector with variable polarity
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
An isotype heterojunction n(+)-ZnO/n-Si photodetector is developed,
demonstrating wavelength-selective or broadband operation, depending on
the applied bias voltage. Additionally, at self-powered (zero bias)
operation, it distinguishes between UV, visible, and near IR (NIR)
photons by polarity control of the photocurrent. The photodetector is
developed by atomic layer deposition (ALD) of ZnO on n-Si, followed by
electric contact deposition and annealing. Photoluminescence
measurements reveal high optical quality and improved crystallinity of
annealed ZnO on silicon. Photocurrent measurements as a function of
illumination wavelength and bias voltage show small negative values in
the UV-visible spectral range at zero and positive bias voltage and high
positive values in the NIR spectral range. For these measurements, we
consider the electric contact to ZnO as the anode and the electric
contact to silicon as the cathode. At negative bias voltage, the device
shows broadband operation with high photocurrent values across the
UV-vis-NIR. (C) 2022 Elsevier B.V. All rights reserved.
Συγγραφείς:
Chatzigiannakis, Georgios
Jaros, Angelina
Leturcq, Renaud and
Jungclaus, Joergen
Voss, Tobias
Gardelis, Spiros
Kandyla,
Maria
Περιοδικό:
Journal of Alloys and Compounds
Εκδότης:
ELSEVIER SCIENCE SA
Λέξεις-κλειδιά:
ZnO; Silicon; Isotype heterojunction; Wavelength selective
photodetector; Photoluminescence; Photoconductivity
DOI:
10.1016/j.jallcom.2022.163836
