Τίτλος:
A systematic study of the electron mobility in V-shaped quantum wires at low temperatures
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
We present a systematic study of the electron mobility in V-shaped AlGaAs/GaAs quantum wires taking into account the impurity (background, remote and interface) and the acoustic-phonon scattering. The electron scattering rates are calculated for wires with electron concentrations up to 106 cm-1 and temperatures up to 40 K by using Fermi's golden rule. The effects of the interface roughness scattering and the alloy scattering are also discussed. The energy eigenstates and eigenvalues of the system under study are calculated using a finite difference method. We analyze the importance of each scattering mechanism on the mobility of several quantum wires of different qualities as a function of the electron concentration and the temperature. © 2008 Elsevier Ltd. All rights reserved.
Συγγραφείς:
Tsetseri, M.
Triberis, G.P.
Tsaousidou, M.
Περιοδικό:
Superlattices and Microstructures
Λέξεις-κλειδιά:
Electron mobility; Electron scattering; Fermi level; Low temperature operations; Phonon scattering; Semiconducting aluminum compounds; Semiconducting gallium arsenide, Electron scattering rates; V-shaped quantum wires, Semiconductor quantum wires
DOI:
10.1016/j.spmi.2008.01.010
