Τίτλος:
OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED SILICON
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Small-angle neutron scattering is used to study the precipitation
behaviour of dissolved oxygen in dislocation-free Czochralski-grown
single crystals of silicon doped with boron and compared with those for
similar undoped material. The presence of boron dramatically alters the
nature of precipitates in silicon. Heat treatment at 1023 K no longer
leads to the formation of the large cushion-shaped precipitates observed
in essentially undoped material. The precipitates are much smaller, and
do not exhibit any anisotropic small-angle scattering. Furthermore, the
precipitation process is over in less than 24 h. Subsequent treatment
at 1323 K leads to the formation of cushion-shaped regions which are
much larger than those formed in the absence of boron.
Συγγραφείς:
GUPTA, S
MESSOLORAS, S
SCHNEIDER, JR
STEWART, RJ and
ZULEHNER, W
Περιοδικό:
Journal of Applied Crystallography
Εκδότης:
MUNKSGAARD INT PUBL LTD
DOI:
10.1107/S0021889890013164
