Περίληψη:
We considered planar positron channeling in 110 planes in Silicon.
We used the appropriate Fokker-Planck type kinetic equation to calculate
the values of the flux distribution function at several depths for the
energies of 1 GeV, 5 GeV and 10 GeV and incidence angles 0, 0.5 Psi(L),
and 0.8 Psi(L), where Psi(L) is the Lindhard angle. Using the values of
the flux distribution function at the critical transverse energy, we
calculated the mean number of particles with transverse energies equal
to the critical one. The first maximum of the radiation intensity is
proportional to this number. We conclude that the first maximum of the
radiation intensity versus particle energy is expected to decrease
dramatically with increasing depth.
