Τίτλος:
A modelocked semiconductor laser for a polarized electron source
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
We have constructed a prototype compact laser system based on GaAlAs
semiconductor diodes. It has been designed specifically to be used with
strained GaAs type photocathodes as a source for CW electron
accelerators. It produces pulses of picosecond duration, at a repetition
rate that can be set anywhere between 0.3 and 3 GHz. The system operates
at average powers up to 150 mW, and the semiconductors that are
presently installed emit at a wavelength of 847 nm with a 4 nm tuning
range, though these can be easily substituted to give a 70 nm tuning
range.
Συγγραφείς:
Ciarrocca, M
Avramopoulos, H
Papanicolas, CN
Περιοδικό:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION
A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Εκδότης:
ELSEVIER SCIENCE BV
Λέξεις-κλειδιά:
laser; polarized electrons; photocathodes; injection
DOI:
10.1016/S0168-9002(96)01186-2
