Τίτλος:
Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40eV and the grain boundaries barrier at 150meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14cm 3 was estimated. © 2012 IOP Publishing Ltd.
Συγγραφείς:
Kostis, I.
Michalas, L.
Vasilopoulou, M.
Konofaos, N.
Papaioannou, G.
Iliadis, A.A.
Kennou, S.
Giannakopoulos, K.
Papadimitropoulos, G.
Davazoglou, D.
Περιοδικό:
Journal of Physics D: Applied Physics
Λέξεις-κλειδιά:
Conduction Mechanism; Deposition technique; Hall measurements; N-type conductivity; Nanostructured Films; Near room temperature; Room temperature; Saturation current; Structural and electrical properties; Thermally activated; Tungsten oxide; Tungsten oxide films; Tungsten trioxide; Variable range hopping, Activation energy; Electric properties; Grain boundaries; Oxide films; Oxides; Tungsten; Tungsten compounds; Wire, Hydrogen
DOI:
10.1088/0022-3727/45/44/445101
