Τίτλος:
Interaction of point defects with impurities in the Si-SiO 2system and its influence on the interface properties
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Point defect (PD) generation, redistribution and interaction with impurities in the Si-SiO2 system are studied during the formation process by electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) spectra. The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation conditions: temperature, cooling rate, oxidation time and impurity content. The difference between interface properties of n- and p-type wafers could be related to different Fermi level position at the interface and to different PD densities in the volume. © (2011) Trans Tech Publications, Switzerland.
Συγγραφείς:
Kropman, D.
Mellikov, E.
Kärner, T.
Heinmaa, I.
Laas, T.
Londos, C.A.
Misiuk, A.
Περιοδικό:
Diffusion and Defect Data Part B: Solid State Phenomena
Εκδότης:
Trans Tech Publications, Ltd.
Λέξεις-κλειδιά:
Electron spin resonance spectroscopy; Impurities; Oxidation; Paramagnetic resonance; Paramagnetism; Point defects; Semiconductor device manufacture; Silicon; Silicon compounds; Silicon wafers; Stress relaxation; Surface defects; Electron spin resonance spectroscopy; Nuclear magnetic resonance; Paramagnetic resonance; Semiconductor device manufacture; Silica; Silicon wafers; Stress relaxation; Thermooxidation, Cooling rates; Formation process; Impurities in; Impurity content; Interface property; Oxidation conditions; Oxidation time; P-type wafer; Si surfaces; Thermal oxidation; Electron paramagnetic resonances (EPR); Nuclear magnetic resonance(NMR); Si-SiO2 interfaces, Nuclear magnetic resonance; Point defects
DOI:
10.4028/www.scientific.net/SSP.178-179.263
