Τίτλος:
Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x = 0.5-0.7) on technologically important (100) Germanium substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor (MFS) capacitors, show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS capacitors with x = 0.58 show very large remanent polarization up to 34.4 μC/cm2 or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at a cycling field of 2.3 MV/cm. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1 T FeFET embedded nonvolatile memory cells with improved endurance. © 2019 Author(s).
Συγγραφείς:
Zacharaki, C.
Tsipas, P.
Chaitoglou, S.
Fragkos, S.
Axiotis, M.
Lagoyiannis, A.
Negrea, R.
Pintilie, L.
Dimoulas, A.
Περιοδικό:
Applied Physics Letters
Εκδότης:
American Institute of Physics Inc.
Λέξεις-κλειδιά:
Deposition; Ferroelectricity; Germanium; Hafnium compounds; Oxygen; Polarization; Substrates; Zirconium compounds, Crystalline interfaces; Ferroelectric field effect transistors; Ferroelectric hysteresis; Germanium substrates; Metal-ferroelectric-semiconductors; Nonvolatile memory cells; Orthorhombic phase; Polycrystalline ferroelectrics, Field effect transistors
