Τίτλος:
Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
One of the main issues in the characterization of silicon on insulator (SOI) substrates is to determine the quality of the film-buried oxide interface. This interface quality is strongly connected to the carrier lifetime in the silicon film. In this paper, we extend the well-known pseudo-MOSFET characterization technique for SOI wafers to the extraction of carrier lifetime. The experiment consists in comparing the drain current measured under dark and under laser shining. A model is proposed to evaluate the surface recombination velocity in SOI. Experimental results are validated by numerical simulations. © 2013 AIP Publishing LLC.
Συγγραφείς:
Daanoune, M.
Diab, A.
Sirajeddine, S.
Kaminski-Cachopo, A.
Ionica, I.
Papaioannou, G.
Cristoloveanu, S.
Περιοδικό:
Journal of applied physics
Λέξεις-κλειδιά:
Characterization techniques; Interface quality; Oxide interfaces; Silicon-on-insulator materials; Silicon-on-insulator substrates; Strongly connected; Surface recombination velocities; Surface recombinations, Characterization; Silicon; Silicon on insulator technology, Interfaces (materials)
