Τίτλος:
Thermally induced defects in silicon irradiated with fast neutrons
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Defect structure of Czochralski grown (1 1 1) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5×1016 cm-2) and annealed at up to 1400 K, also under hydrostatic Ar pressure equal to 1.1 GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400 K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures-pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples. © 2009 Elsevier Ltd. All rights reserved.
Συγγραφείς:
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Romanowski, P.
Bak-Misiuk, J.
Prujszczyk, M.
Londos, C.A.
Graeff, W.
Περιοδικό:
Radiation Physics and Chemistry
Αριθμός / τεύχος:
10 SUPPL.
Λέξεις-κλειδιά:
Czochralski; Extended defect; Fast neutrons; High resolution X ray diffraction; High temperature; Imaging; Interstitial oxygen; Oriented silicon; Oxygen precipitation; Synchrotron topography; Thermally induced, Crystal structure; Neutron irradiation; Neutrons; Oxygen; Precipitation (chemical); Single crystals, Defect structures, oxygen; silicon, article; controlled study; crystal structure; high temperature; hydrostatic pressure; neutron radiation; precipitation; synchrotron; X ray diffraction
DOI:
10.1016/j.radphyschem.2009.03.087
