Τίτλος:
N-N pair effects on GaInNAs semiconductor optical amplifiers
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k-p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Συγγραφείς:
Alexandropoulos, D.
Vogiatzis, N.
Qiu, Y.N.
Pozo, J.
Syvridis, D.
Rorison, J.M.
Περιοδικό:
Physica Status Solidi (C) Current Topics in Solid State Physics
Λέξεις-κλειδιά:
Amplified spontaneous emission; Amplifying properties; Anti-crossing; Band structures; Conduction bands; Gainnas; International conferences; N-N pairs; Nano-devices; Rate equations; Semi-conductor optical amplifier; Valence bands, Amplifiers (electronic); Electric conductivity; Electron mobility; Gallium nitride; Nanostructures; Optical switches; Optoelectronic devices; Semiconductor materials; Semiconductor optical amplifiers, Light amplifiers
DOI:
10.1002/pssc.200673227
