Τίτλος:
Width dependent degradation of polycrystalline silicon TFTs
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
The DC stress induced device degradation of sequential lateral
solidification (SLS) polysilicon thin film transistors (TFTs) was
investigated by monitoring the threshold voltage in the linear regime of
operation. Devices with different channel widths were compared. It was
observed that the degradation of device parameters during hot carrier
experiments was dependent on the channel width. The origin of this
dependence is ascribed to self-heating effects.
Συγγραφείς:
Kontogiannopoulos, G. P.
Farmakis, F. V.
Kouvatsos, D. N. and
Papaioannou, G. J.
Voutsas, A. T.
Εκδότης:
IEEE Comput. Soc
Τίτλος συνεδρίου:
2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2,
PROCEEDINGS
DOI:
10.1109/ICMEL.2008.4559344
