Τίτλος:
Impact of dielectric film thickness on field emission in MEMS capacitive switches
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
This study presents experimental evidence of field emission in MEMS capacitive switches. Devices with dielectric layers of silicon nitride of different thicknesses between 50 and 200 nm were investigated by current-voltage (I-V) measurements. These measurements were performed at room temperature and under a controlled atmosphere pressure of 3 × 10−2 mbar at bias levels below breakdown and corresponding electric fields encountered in MEMS capacitive switches during pull-in (1-2 × 106 V/cm). Field emission although was not always clearly observed, it occurred in all devices and clearly manifested at electric fields larger than 106 V/cm. © 2022 Elsevier Ltd
Συγγραφείς:
Theocharis, J.
Gardelis, S.
Papaioannou, G.
Περιοδικό:
MICROELECTRONICS AND RELIABILITY
Εκδότης:
Elsevier Ireland Ltd
Λέξεις-κλειδιά:
Dielectric films; Electric switches; Field emission, Atmosphere pressure; Bias levels; Controlled environment; Current-voltage measurements; Dielectric film thickness; Dielectric layer; Different thickness; Electrical characterization; Experimental evidence; MEMS capacitive switch, Silicon nitride
DOI:
10.1016/j.microrel.2022.114649
