Τίτλος:
Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
Microstructure of neutron irradiated Cz-Si has been examined after out-annealing of irradiation-induced defects and pressure treatment at 1170 K-1 GPa. X-ray diffuse scattering and defect dimensions are related to oxygen concentration and to stress-induced oxygen precipitation. The pressure treatment results in diminished diffuse scattering and defect dimensions. © 2001 Elsevier Science Ltd. All rights reserved.
Συγγραφείς:
Bak-Misiuk, J.
Londos, C.A.
Misiuk, A.
Fytros, L.G.
Surma, H.B.
Trela, J.
Papastergiou, K.
Domagala, J.
Περιοδικό:
International Journal of Inorganic Materials
Λέξεις-κλειδιά:
silicon, conference paper; crystal structure; neutron radiation; radiation scattering; stress strain relationship; X ray diffraction
DOI:
10.1016/S1466-6049(01)00146-5
