Περίληψη:
A broadly tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source is demonstrated, consisting of an external cavity passively mode-locked laser diode with a tapered semiconductor amplifier. By employing chirped quantum-dot structures on both the oscillator's gain chip and amplifier, a wide tunability range between 1187 and 1283 nm is achieved. Under mode-locked operation, the highest output peak power of 4.39 W is achieved from the MOPA, corresponding to a peak power spectral density of 31.4 dBm/nm. © 1989-2012 IEEE.
Συγγραφείς:
Ding, Y.
Alhazime, A.
Nikitichev, D.
Fedorova, K.
Ruiz, M.
Tran, M.
Robert, Y.
Kapsalis, A.
Simos, H.
Mesaritakis, C.
Xu, T.
Bardella, P.
Rossetti, M.
Krestnikov, I.
Livshits, D.
Montrosset, I.
Syvridis, D.
Cataluna, M.A.
Krakowski, M.
Rafailov, E.
Λέξεις-κλειδιά:
External cavity; master-oscillator power-amplifier; Mode-locked; Modelocking; Optical pulse sources; Output peak power; Passively mode-locked lasers; Picoseconds; Quantum dot structure; Semiconductor amplifiers; Tunabilities, Lasers; Passive mode locking; Power spectral density; Semiconductor quantum dots, Saturable absorbers
