Τίτλος:
Experimental and theoretical study of the C4 defect in neutron irradiated silicon
Γλώσσες Τεκμηρίου:
Αγγλικά
Περίληψη:
This work reports infrared spectroscopy studies in neutron irradiated Cz-Si containing carbon. The material was thermally treated at high temperature prior to irradiation. The aim was to investigate the production and annealing of the CiOi(SiI) defect, well-known as C4 center. Besides the two standard localized vibrational modes (LVMs) at 934 and 1018 cm-1 detected always in room temperature measurements, another band was also detected at 760 cm-1. The latter band has the same annealing behavior as the 934 and 1018 cm-1 bands. Its existence has been predicted by theoretical calculations previously, but it has not been reported definitely so far experimentally. The present study verifies unambiguously its presence. Upon annealing the above three bands begin to decay in the spectra at ∼140 °C and disappear at ∼200 °C. No other bands appear to arise in the spectra upon the disappearance of the above bands. Semi-empirical calculations of the LVM frequencies of the C4 complex verify the correlation of the 760 cm-1 band with this center. The annealing kinetics of the bands was investigated, and it was found that their decay follows a second order reaction with an average activation energy of E ∼ 0.50 ± 0.02 eV. © 2018 Author(s).
Συγγραφείς:
Londos, C.A.
Aliprantis, D.N.
Antonaras, G.
Potsidi, M.S.
Angeletos, T.
Περιοδικό:
Journal of applied physics
Εκδότης:
American Institute of Physics Inc.
Λέξεις-κλειδιά:
Activation energy; Defects; Infrared spectroscopy; Reaction kinetics; Silicon; Silicon compounds; Temperature measurement, Annealing behavior; Annealing kinetics; Neutron irradiated; Neutron-irradiated silicon; Second-order reaction; Semi-empirical calculation; Theoretical calculations; Theoretical study, Annealing
